ANALOG CHARACTERISTICS OF DRAIN ENGINEERED SUBMICRON MOSFETS FOR MIXED-SIGNAL APPLICATIONS

Drain engineered MOSFETs are compared in terms of their impact on anal og performance for submicron mixed-signal applications. The high energ y implanted lightly doped drain (LDD) devices are shown only to improv e voltage gain at high drain voltage, while large-angle-tilt implanted drain (LATID) devices show that the reduced substrate current and jun ction depth due to the tilt angle implant can significantly improve ma ximum available gain and voltage swing. Also, superior analog hot-carr ier immunity in LATID MOSFETs is demonstrated through offset voltage d rift in source-coupled transistor pair. These results suggest that LAT ID technology is promising for applications to submicron mixed analog/ digital circuits.