Hs. Chen et al., ANALOG CHARACTERISTICS OF DRAIN ENGINEERED SUBMICRON MOSFETS FOR MIXED-SIGNAL APPLICATIONS, Solid-state electronics, 38(11), 1995, pp. 1857-1859
Drain engineered MOSFETs are compared in terms of their impact on anal
og performance for submicron mixed-signal applications. The high energ
y implanted lightly doped drain (LDD) devices are shown only to improv
e voltage gain at high drain voltage, while large-angle-tilt implanted
drain (LATID) devices show that the reduced substrate current and jun
ction depth due to the tilt angle implant can significantly improve ma
ximum available gain and voltage swing. Also, superior analog hot-carr
ier immunity in LATID MOSFETs is demonstrated through offset voltage d
rift in source-coupled transistor pair. These results suggest that LAT
ID technology is promising for applications to submicron mixed analog/
digital circuits.