TEMPERATURE EFFECTS ON PIN DIODE FORWARD BIAS RESISTANCE

This paper presents the results of a study that examines the mechanism s that influence the resistance-temperature characteristic of silicon PIN diodes. Resistance, stored charge and deep level transient spectro scopy measurements performed on PIN diodes of different passivations ( silicone dioxide, silicon nitride on silicon dioxide and glass) at dif ferent temperatures indicate that surface conditions dominate the carr ier lifetime and resistance in PIN diodes. Since the passivation direc tly affects surface recombination and hence the carrier lifetime, the temperature dependence df bulk phenomenon of any kind is of secondary importance.