OBSERVATION AND MODELING OF RTS IN INALAS INCAAS/INP HFETS/

For the first time we report the observation of random telegraph signa ls (RTS) in InAlAs/InGaAs/InP HFETs. The RTS show a clear Lorentz spec trum in the frequency domain corresponding to deep traps with an activ ation energy of Delta E(T) = 0.34 eV. The amplitude of the RTS is abou t 10 mu V, which is more than could be expected by single electron tra pping; For a theoretical explanation of the RTS, we assume a correlate d capture and emission process, taking into account the change of the electrostatic potential across the gate-source capacitance. Our result s show, that the measured amplitude of the RTS can be well understood, if the traps are located beneath the gate electrode.