LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAN GAINN HETEROSTRUCTURES/

GaN layers with different nucleation techniques have been grown by met alorganic vapor phase epitaxy. At atmospheric pressure, no epitaxial l ayer growth occurred, whereas at low pressure the GaN quality could be drastically improved by an AIN nucleation layer. Excellent material p roperties have been found by photoluminescence, X-ray diffraction and Hall experiments. The incorporation of In in GaInN could be enhanced b y a reduction of both growth temperature and reactor pressure. GaInN q uantum wells grown at 700 degrees C show fairly strong photoluminescen ce peaks. (C) 1997 Elsevier Science Ltd.