GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS

Authors
BINARI SC DOVERSPIKE K KELNER G DIETRICH HB WICKENDEN AE
Citation
Sc. Binari et al., GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS, Solid-state electronics, 41(2), 1997, pp. 177-180
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
2
Year of publication
1997
Pages
177 - 180
Database
ISI
SICI code
0038-1101(1997)41:2<177:GFFMAH>2.0.ZU;2-O
Abstract
The d.c., microwave, and high-temperature characteristics of Si-doped MESFETs with and without n(+) ohmic contact layers, Si3N4/GaN MISFETs, and AIN/GaN HFETs are presented. The highest transconductance and mic rowave performance were observed for 1 mu m gate-length HFETs. These H FETs have a transconductance of 45 mS/mm, an f tau of 8 GMz, and an f( max) of 22 GHz. The Si-doped MESFETs have good pinch-off characteristi cs at 400 degrees C and are operational at 500 degrees C.