OPTICAL CHARACTERIZATION OF GAN AND RELATED MATERIALS

Citation
B. Monemar et al., OPTICAL CHARACTERIZATION OF GAN AND RELATED MATERIALS, Solid-state electronics, 41(2), 1997, pp. 181-184
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
41
Issue
2
Year of publication
1997
Pages
181 - 184
Database
ISI
SICI code
0038-1101(1997)41:2<181:OCOGAR>2.0.ZU;2-7
Abstract
Recent experimental results on optical properties of GaN and related m aterials are discussed. Photoluminescence data of free excitons for su fficiently pure GaN samples demonstrate the dominance of excitonic rec ombination well above room temperature. Transient PL data give a radia tive lifetime of about 200 ps for the A-exciton at 2 K in strain-free samples. A corresponding value of about 2 ns at room temperature is ex trapolated. Radiative lifetimes for bound excitons are measured as abo ut 250 ps for shallow donors and about 1.5 ns for shallow accepters. P hotoluminescence spectra from the 2D electron gas at a GaN/AlGaN heter ointerface are also demonstrated. (C) 1997 Elsevier Science Ltd.