BANDGAP ENERGY OF CUBIC GAN

Citation
H. Okumura et al., BANDGAP ENERGY OF CUBIC GAN, Solid-state electronics, 41(2), 1997, pp. 201-204
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
41
Issue
2
Year of publication
1997
Pages
201 - 204
Database
ISI
SICI code
0038-1101(1997)41:2<201:BEOCG>2.0.ZU;2-C
Abstract
Magnetic circular dichroism and time-resolved photoluminescence spectr a were measured for cubic GaN epitaxial layers grown by gas source mol ecular beam epitaxy using NH3 plasma. Pronounced spectral features wer e observed in the magnetic circular dichroism spectra at the same ener gy position as the highest energy signals in reflection and photolumin escence spectra of the epilayers. The time-resolved photoluminescence measurement showed that the corresponding transition has a lifetime of around 15 ps. Considering these results, the exciton bandgap of cubic GaN is estimated to be 3.27 +/- 0.01 eV at 4.2 K. (C) 1997 Elsevier S cience Ltd.