H. Tsuchiya et al., DEPENDENCE OF THE HVPE GAN EPILAYER ON GAN BUFFER LAYER FOR GAN DIRECT GROWTH ON (001)GAAS SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 333-338
Cubic GaN was grown on (001) GaAs substrates by hydride vapor phase ep
itaxy (HVPE) with a buffer layer grown by low temperature HVPE. The cr
ystalline structure of the GaN buffer layer is studied using reflectio
n high-energy electron diffraction (RHEED). The GaN layers were grown
at 800 degrees C on the buffer layer with various growth temperatures
and thicknesses. The optimum thickness of the buffer layer grown at 50
0 degrees C to obtain a cubic GaN layer was found to be 60 nm in our c
ase. When the buffer layer was grown at 525 degrees C, however, the fu
ll width at half-maximum (FWHM) of the X-ray diffraction (XRD) pattern
was 21.2 min, which is the narrowest ever reported, as far as we know
. Furthermore, it was demonstrated that a single crystalline GaN buffe
r layer was necessary to obtain high-quality thick cubic GaN. (C) 1997
Elsevier Science Ltd.