MICRODISK LASER STRUCTURES FORMED IN III-V NITRIDE EPILAYERS

Several kinds of nitride-based micro-resonators have been fabricated. Firstly, a microdisk laser structure comprising three InGaN/GaN quantu m wells on a thick AIN buffer has been grown by metal-organic molecula r beam epitaxy and fabricated using a combination of non-selective Cl- 2/CH4/H-2/Ar dry etching and selective KOH-based wet etching of the Al N. These structures are of potential use in short wavelength photonic or optoelectronic circuits. In a second structure Er was implanted int o a GaN layer to produce strong emission at 1.54 mu m. Similar results have been obtained in Er-implanted AIN, and AIN doped during epitaxia l growth. (C) 1997 Published by Elsevier Science Ltd.