1 W KU-BAND ALGAAS GAAS POWER HBTS WITH 72-PERCENT PEAK POWER-ADDED EFFICIENCY/

Authors
SHIMURA T SAKAI M IZUMI S NAKANO H MATSUOKA H INOUE A UDOMOTO J KOSAKI K KURAGAKI T TAKANO H SONODA T TAKAMIYA S
Citation
T. Shimura et al., 1 W KU-BAND ALGAAS GAAS POWER HBTS WITH 72-PERCENT PEAK POWER-ADDED EFFICIENCY/, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1890-1896
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
11
Year of publication
1995
Pages
1890 - 1896
Database
ISI
SICI code
0018-9383(1995)42:11<1890:1WKAGP>2.0.ZU;2-5
Abstract
High power and high-efficiency multi-finger heterojunction bipolar tra nsistors (HBT's) have been successfully realized at Ku-band by using a n optimum emitter ballasting resistor and a plated heat sink (PHS) str ucture. Output power of 1 W with power-added efficiency (PAE) of 72% a t 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 mu m(2). 72% PAE with the output power density of 5.0 W/m m is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band.