PLANARIZATION OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY LIQUID-PHASE DEPOSITION OF SILICON DIOXIDE

A planarized device structure was developed for amorphous silicon thin film transistors to overcome the gate leakage problem, Utilizing the liquid phase deposition technique, a silicon oxide film with thickness exactly equal to the gate height was grown around the gate to planari ze the surface for the fabrication of inverted staggered thin film tra nsistors, The planarized thin him transistor has smaller leakage curre nt and better performance, i.e., held effect mobility, subthreshold sw ing, etc, This novel process has a potential to improve the yield of l arge area liquid crystal display.