COSI2 OHMIC CONTACTS TO N-TYPE 6H-SIC

Cobalt disilicide (CoSi2) ohmic contacts possessing low specific conta ct resistivity (rho(c) < 3.0 +/- 0.4 x 10(-5) Omega cm(2)) to n-type 6 H-SiC are reported. The contacts were fabricated via sequential electr on-beam evaporation of Co and Si layers followed by a two-step vacuum anealing process at 500 and 900 degrees C. Stochiometry of the contact so formed was confirmed by Rutherford backscattering spectrometry and X-ray diffraction. Specific contact resistivities were obtained via c urrent-voltage (I-V) analysis at temperatures ranging from 25 to 500 d egrees C. rho(c) is compared as a function of carrier concentration, c urrent density, temperature and time at elevated temperature.