Detailed measurements and modeling of 500 V asymmetric field controlle
d thyristor characteristics in the 300-77 K temperature range are pres
ented for the first time. When the temperature is reduced from 300 to
77 K, it has been found that: the forward voltage drop increases by ab
out 40%; the breakdown voltage reduces by 20%; the blocking gain remai
ns essentially constant; the turn-off time reduces by 10 x and the gat
e charge withdrawn via the gate current flow during turn-off reduces b
y 95 x. The forward voltage drop versus turn-off time trade-off curve
obtained by temperature reduction is found to be much superior to that
obtained by electron radiation.