THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ONGAAS

Authors
BANGERT U TANG B MISSOUS M
Citation
U. Bangert et al., THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ONGAAS, Journal of crystal growth, 154(3-4), 1995, pp. 223-230
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
154
Issue
3-4
Year of publication
1995
Pages
223 - 230
Database
ISI
SICI code
0022-0248(1995)154:3-4<223:TOAFGB>2.0.ZU;2-0
Abstract
The morphology and re-crystallisation behaviour of thick molecular bea m epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al procee ds vertically and substrate driven with simultanuous formation of spha lerite phases in the (100) Al, giving the overall appearance of an int erdiffused layer of 60-100 Angstrom.