POSITION-DEPENDENT GROWTH-RATE AND COMPOSITION OF LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN INGAP AND ALGAAS ON GAAS INVERTED MESA GROOVES

Authors
ANDERS MJ BONGERS MMG BASTOS PL GILING LJ
Citation
Mj. Anders et al., POSITION-DEPENDENT GROWTH-RATE AND COMPOSITION OF LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN INGAP AND ALGAAS ON GAAS INVERTED MESA GROOVES, Journal of crystal growth, 154(3-4), 1995, pp. 240-250
Citations number
23
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
154
Issue
3-4
Year of publication
1995
Pages
240 - 250
Database
ISI
SICI code
0022-0248(1995)154:3-4<240:PGACOL>2.0.ZU;2-X
Abstract
In this article it is shown that growth phenomena in AlGaAs and InGaP grown in inverted mesa grooves can be explained qualitatively by a cal culation model that accounts for the orientation dependence of incorpo ration rate and the influence of surface diffusion.