IRON-DOPED GAINP FOR SELECTIVE REGROWTH AROUND GAAS MESAS

The feasibility of growing Gao(0.51)In(0.49)P:Fe on planar and non-pla nar GaAs substrates by hydride vapour phase epitaxy is demonstrated. F e doping has been achieved by the reaction between Fe solid source and HCl gas in an ambient containing nitrogen and hydrogen of ratio 9:1. Various Fe concentrations in Ga0.51In0.49P:Fe were obtained by changin g the temperature of the Fe source, while maintaining all the other pa rameters constant. This relation in the form of an Arrhenius plot is c ompared to the case of InP:Fe. The slope of the Arrhenius plots for bo th the cases is 1.44 eV and is attributed to the activation energy of a step involved in the generation of FeCl2. The resistivity of Ga0.51I n0.49 P:Fe is of the order of 1 x 10(10) Omega . cm. A successful sele ctive regrowth of Ga0.51In0.49 P:Fe around the [110] and [110] directi onal GaAs mesas is also demonstrated.