THE MORPHOLOGICAL STABILITY IN SUPERCRITICAL-FLUID CHEMICAL-DEPOSITION OF FILMS NEAR THE CRITICAL-POINT

Citation
Oa. Louchev et al., THE MORPHOLOGICAL STABILITY IN SUPERCRITICAL-FLUID CHEMICAL-DEPOSITION OF FILMS NEAR THE CRITICAL-POINT, Journal of crystal growth, 155(3-4), 1995, pp. 276-285
Citations number
10
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
155
Issue
3-4
Year of publication
1995
Pages
276 - 285
Database
ISI
SICI code
0022-0248(1995)155:3-4<276:TMSISC>2.0.ZU;2-J
Abstract
In this paper, the results of experimental and theoretical studies of the chemical deposition of copper films from metalorganic compounds di ssolved in supercritical C2F6 are reported. The optimal conditions for the growth of highly adherent Cu films with good surface morphology h ave been determined. A theoretical analysis of the kinetics, the stabi lity of the growth interface together with the transport phenomena ins ide the supercritical cell shows that the morphological stability is d etermined by the interplay of three factors. These are the bulk diffus ion near the interface, the thermally activated kinetics, and the heat transfer across the deposited layer. It is shown that the morphologic al stability of the grown film is ensured by an enhanced turbulent con vection occurring if the operation pressure and temperature are close enough to the critical point.