CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

The defect engineering in metalorganic vapor phase epitaxy In(x)G(1-x) As and InP controlled oxygen doping using diethyl aluminum ethoxide (D EALO) was developed in this study. DEALO doping has led to the incorpo ration of Al and O, and the compensation of shallow Si donors in InxGa 1-xAs:Si with 0 less than or equal to x less than or equal to 0.25. Wi th the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si do nors decreases with increasing In content. Deep level transient spectr oscopy analysis on a series of InxGa1-xAs:Si:O samples with 0 less tha n or equal to x less than or equal to 0.18 revealed that oxygen incorp oration led to a set of deep levels, similar to those found in DEALO d oped GaAs. As the In composition was increased, one or more of these d eep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of sam ples revealed the quenching of the near-band edge peak, and the appear ance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.