Authors
Citation
Ae. Wickenden et al., DOPING OF GALLIUM NITRIDE USING DISILANE, Journal of electronic materials, 24(11), 1995, pp. 1547-1550
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
ISSN journal
03615235
Volume
24
Issue
11
Year of publication
1995
Pages
1547 - 1550
Database
ISI
SICI code
0361-5235(1995)24:11<1547:DOGNUD>2.0.ZU;2-F
Abstract
The silicon doping of n-type GaN using disilane has been demonstrated
for films grown on sapphire substrates by low pressure organometallic
vapor phase epitaxy. The binding energy of an exciton bound to a neutr
al Si donor has been determined from low temperature (6K) photolumines
cence spectra to be 8.6 meV. Nearly complete activation of the Si impu
rity atom in the GaN lattice has been observed.