MASKLESS SELECTIVE-AREA GROWTH OF INP ON SUB-MU-M V-GROOVE PATTERNED SI(OO1)

Low pressure metalorganic chemical vapor deposition of InP on exactly oriented Si(001) substrates with a periodic V-groove pattern of period icity less than or equal to 1.2 Crm using a two temperature growth seq uence (400 and 640 degrees C) is reported. Planar InP layers with extr emely low defect density of 7 x 10(4) cm(-2) are obtained. For InP on V-grooves of width g less than or equal to 1.0 mu m, a planar surface is formed after less than 1 mu m of growth. Formation or suppression o f antiphase domains (APDs) is a function of the width s of the (001)-o riented ridges. For s less than or equal to 1 mu m, epilayers are sing le domain and the [(1) over bar 10] direction is oriented parallel to the grooves. At 400 degrees C, nucleation starts homogeneously on {111 }-sidewalls and (001)-facets. While heating up to 640 degrees C, InP m igrates into the grooves, depleting almost completely the (001)-facets . During growth of the main layer, first the V-grooves are filled up. Subsequently (001)-ridges are overgrown laterally or voids are formed on top of them. This mechanism is responsible for both planarization a nd APD-suppression. The surface migration length of InP on Si(001) at 640 degrees C is estimated to be approximate to 0.5 mu m.