LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM

In a low-pressure metalorganic vapor phase epitaxy process, we used dc -plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylsel enide and dimethylzinc-triethylamine. The nitrogen concentration of up to 2 x 10(18) cm(-3) in the doped layers can be adjusted by the growt h temperature, the de-plasma power, and the N-2 dopant flow. Due to th e high n-type background carrier concentration of the order of 10(17) cm(-3) in undoped samples, the doped layers show n-type conductivity o r were semi-insulating because of an additional compensation by hydrog en incorporated with a concentration of the order of 10(18) cm(-3). A planar doping scheme was applied to reduce this hydrogen incorporation by one order of magnitude, although H-2 was used as carrier gas.