W. Taudt et al., LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM, Journal of electronic materials, 24(11), 1995, pp. 1671-1675
In a low-pressure metalorganic vapor phase epitaxy process, we used dc
-plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylsel
enide and dimethylzinc-triethylamine. The nitrogen concentration of up
to 2 x 10(18) cm(-3) in the doped layers can be adjusted by the growt
h temperature, the de-plasma power, and the N-2 dopant flow. Due to th
e high n-type background carrier concentration of the order of 10(17)
cm(-3) in undoped samples, the doped layers show n-type conductivity o
r were semi-insulating because of an additional compensation by hydrog
en incorporated with a concentration of the order of 10(18) cm(-3). A
planar doping scheme was applied to reduce this hydrogen incorporation
by one order of magnitude, although H-2 was used as carrier gas.