EFFECT OF BRAGG REFLECTOR ON THE THRESHOLD CURRENT-DENSITY IN ALGAINPVISIBLE LASER

Authors
OH MS KIM NH LEE CH PARK HS KIM JY PAK G KIM TI
Citation
Ms. Oh et al., EFFECT OF BRAGG REFLECTOR ON THE THRESHOLD CURRENT-DENSITY IN ALGAINPVISIBLE LASER, Journal of electronic materials, 24(11), 1995, pp. 1683-1686
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
11
Year of publication
1995
Pages
1683 - 1686
Database
ISI
SICI code
0361-5235(1995)24:11<1683:EOBROT>2.0.ZU;2-U
Abstract
The GaInP/AlGaInP layers are known as attractive materials for 600 nm band laser diodes. In this paper, a Bragg reflector between GaAs subst rate and n-cladding layer was applied for the reduction in the lasing threshold. In a SCH-MQW structure, a Bragg reflector was composed of a lternating lambda/4n layers of AlAs and AlGaAs layers, 12.5 pairs. The effect of Bragg reflector on the threshold current and spontaneous em ission intensity was appreciable because most of spontaneously emitted photons were reflected from a Bragg reflector and carriers were regen erated in the GaInP active layer.