DEFECT STRUCTURES IN SILICON MERGED EPITAXIAL LATERAL OVERGROWTH

Merging of two epitaxial lateral overgrowth fronts has been achieved t o produce thin silicon-on-insulator (SOI) structures. The electronic q uality of the material is generally of high quality; however, at the m erger interface are defects associated with improper merging. Defects at the oxide/silicon interface and the merging interface were characte rized using transmission electron microscopy. Device performance indic ated the need for a process modification to improve the material quali ty for potential electronic applications.