A TECHNIQUE FOR PROFILING THE EPILAYER CHANNEL OF SURFACE-ACOUSTIC-WAVE DEVICES ON PIEZOELECTRIC SEMICONDUCTORS

A new method for determining the impurity doping profile of the transp ort epitaxial layer channel of surface acoustic wave devices on piezoe lectric semiconductors is presented. This technique utilizes the same structure already present in these devices; thus, testing can be done without altering or damaging the device. Another advantage of this tec hnique over the equivalent C-V measurement is the high sensitivity of the TAV to higher resistivity materials. Experiments and estimated dop ing profiles are presented along with the theoretical analysis of the measurement.