AN IMPROVED GENERALIZED GUIDE FOR MOSFET SCALING

For the miniaturization of MOSFET's, a generalized guide for scaling h ad been published in 1980 [1]. This formula can be used as a good star ting point before device fine tuning, and works well above 0.5 mum in channel length. It is expected, however. that for channel lengths belo w 0.5 muM, it becomes inaccurate because of the nature of the equation . Its erroneous implication is that if gate oxide or junction depth ap proaches zero, the channel length can be reduced to zero without suffe ring from short-channel effects. This brief presents a new formula whe re the functions are modified to correct this anomaly. Another importa nt improvement is that the degree of short-channel effect is left as a n input variable.to fit the different requirements of circuits. The re vised formula has been shown to be accurate down to 0.1 mum channel le ngth.