Y. Tomokiyo et al., STRUCTURAL-CHANGE INDUCED NEAR SURFACES OF ALPHA-AL2O3 DURING ELECTRON-IRRADIATION, Microscopy microanalysis microstructures, 4(2-3), 1993, pp. 331-339
A structural change produced by electron irradiation near surfaces of
alpha-Al2O3 was observed through high resolution electron microscopy a
nd electron diffraction. Initially smooth surfaces become rough during
TEM observations at 200 and 400 kV and holes appear with a prefered o
rientation of growth. Planar defects are also produced near the surfac
es; they appear as dark- or bright-lines parallel to the (001) plane w
hen the specimen is observed along the [110] direction, and they are a
lso visible along the [001] direction as a periodic modulation of brig
ht dots. The defects give rise to streaks and extra spots in electron
diffraction patterns along [1101 and [001], respectively. A formation
mechanism and model of the defects were proposed; the defects are indu
ced by inelastic scattering on Al plane parallel to (001) through rear
rangement of Al ions and Al-vacancies. Three quaters of the atomic sit
es of the Al plane are occupied by Al ions and one quater is vacant, w
hile 2/3 of the sites are filled with Al ions in perfect alpha-Al2O3.