GROWTH-KINETICS AND PROPERTIES OF HETEROEPITAXIAL (CD,ZN)TE FILMS PREPARED BY METALORGANIC MOLECULAR-BEAM EPITAXY

Thermally precracked diethylzinc, dimethylcadmium, and diethyltellurid e were used for the metalorganic molecular beam epitaxial growth of (0 01) ZnTe, CdTe, and CdZnTe films on GaAs substrates. Measurements of t he growth rate as a function of the substrate temperature and the II/V I ratio were used to determine the growth kinetics of (001) ZnTe and C dTe. (001) CdTe, ZnTe, and CdZnTe films were deposited under near-stoi chiometric growth conditions, as determined from the growth kinetics. The best heteroepitaxial films exhibited x-ray rocking curve full widt hs at half maximum of 200-210 arc-s. The photoluminescence spectra of the binary and ternary films at 5K were dominated by features associat ed with bound and free excitons. Secondary ion mass spectrometry measu rements showed that the films were free of carbon and oxygen. A new me rcury precursor, divinylmercury, was used for HgTe growth. Preliminary results indicated that divinylmercury is a viable mercury source for metalorganic molecular beam epitaxial growth when it is precracked.