GROWTH OF HGSE AND HG1-XCDXSE THIN-FILMS BY MOLECULAR-BEAM EPITAXY

Authors
LANSARI Y COOK JW SCHETZINA JF
Citation
Y. Lansari et al., GROWTH OF HGSE AND HG1-XCDXSE THIN-FILMS BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 22(8), 1993, pp. 809-813
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
8
Year of publication
1993
Pages
809 - 813
Database
ISI
SICI code
0361-5235(1993)22:8<809:GOHAHT>2.0.ZU;2-V
Abstract
Thin epitaxial films of HgSe and Hg1-xCdxSe (x less-than-or-equal-to 0 .34) were successfully grown for the first time by molecular beam epit axy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.