CDTE AND HGTE SURFACE GROWTH-KINETICS FOR MOLECULAR AND METALORGANIC MOLECULAR-BEAM EPITAXY

The surface growth kinetics of CdTe and HgTe have been investigated du ring molecular and metalorganic molecular beam epitaxy. The surface gr owth kinetics was studied through in-situ measurements of the growth r ate as a function of flux ratio and substrate temperature on the (001) , (111)B, and (211)B CdTe surface orientations. For the (001) and (111 )B CdTe growth kinetics, the existence of low binding energy surface p recursor sites was proposed for both molecular and atomic growth speci es before lattice incorporation. Intensity oscillations were observed during HgTe growth on misoriented (111)B surfaces and during CdTe grow th on the (211)B orientation. The (211)B surface reconstructions displ ayed both vicinal and singular surface characteristics, depending on t he growth flux ratio.