INDIUM DOPING OF HGCDTE GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION-DIRECT ALLOY GROWTH USING TRIISOPROPYLINDIUM AND DIISOPROPYLTELLURIUM.TRIISOPROPYLINDIUM ADDUCT

A new indium source, triisopropylindium, was used to dope HgCdTe layer s grown by metalorganic chemical vapor deposition n-type with carrier concentrations, n(H), in the range between low 10(15) and low 10(17) c m-3 at 77K. The reproducibility of carrier concentration was found to be excellent for n(H) < 3 x 10(15) Cm-3. High electron mobilities and minority carrier lifetime comparable to published values indicate that indium doping produces high quality n-type HgCdTe material. State-oft he-art photodiodes were obtained by growing a p-type HgCdTe layer by l iquid phase epitaxy on an indium doped layer. In addition, an adduct c ompound formed between diisopropyltellurium (DIPTe) and triisopropylin dium (TIPIn): DIPTe.InTIP, was also found to be a viable n-type dopant for HgCdTe especially at concentrations in the low 10(15) cm-3 or les s.