T. Fanning et al., SYNCHROTRON WHITE-BEAM X-RAY TOPOGRAPHY ANALYSIS OF MBE GROWN CDTE CDTE (111)B/, Journal of electronic materials, 22(8), 1993, pp. 943-949
The structural quality of CdTe (111)B substrates and MBE grown CdTe ep
ilayers is examined with synchrotron white beam x-ray topography (SWBX
T). Reflection SWBXT indicates that CdTe substrates with comparable x-
ray double crystal rocking curve full width at half maximum values can
have radically different defect microstructures, i.e. dislocation den
sities and the presence of inclusions. Dislocation mosaic structures d
elineated by SWBXT are consistent with the distribution of etch pits r
evealed by destructive chemical etch pit analysis. Direct one-to-one c
orrespondence between distinct features of the topographic image and i
ndividual etch pits is demonstrated. Clearly resolved images of indivi
dual dislocations are obtained by carrying out transmission SWBXT. Our
investigation demonstrates how the extent of twinning in a CdTe epila
yer is strongly influenced by the quality of the defect microstructure
, and how dislocations propagate from an inclusion.