AUGER LIFETIMES IN IDEAL INGASB INAS SUPERLATTICES/

Quantitative calculations are reported of both band-to band Auger and radiative recombination lifetimes in thin-layered type II InxGa1-xSb/I nAs superlattices with energy gaps in the 5-17 mum range, using accura te band structure and numerical techniques. Results for an 11 mum supe rlattice are compared with similar calculations for bulk HgCdTe and a HgTe/CdTe superlattice having the same energy gap. The results show th e n-type Auger rates to be comparable and the p-type rates to be suppr essed by three orders of magnitude in some experimentally realizable s tructures. Thus, well fabricated III-V superlattices appear to be exce llent candidates as a new class of infrared detectors.