SINGLE-CRYSTAL SI INFRARED IMPROVEMENT BY IMPLANTATION PROCESSING

An investigation of the influence of the built-in strain field on the 1800-nm divacancy infrared hand activity has revealed a totally unknow n behavior. First, even annealing temperature of 500 degrees C is not enough to quench the absorption of divacancies trapped in the built-in strain field. Next, the elimination of useful band-tail and useless d ivacancy activities is not coincident; i.e., divacancy absorption can be quenched without too much reduction of the band-tail activity. The unusually high value of the widened absorption can be transformed into a relatively important infrared current which could be observed exper imentally up to 2500 nm and by extrapolation up to about 3500 nm.