LOW-VAPOR-PRESSURE AND CONTROLLED-VAPOR-PRESSURE GROWTH OF CDXHG2-XSE(TE) CRYSTALS

Authors
PARANCHICH LD ROMANYUK OS MAKOGONENKO VN KURGANETSKII NV
Citation
Ld. Paranchich et al., LOW-VAPOR-PRESSURE AND CONTROLLED-VAPOR-PRESSURE GROWTH OF CDXHG2-XSE(TE) CRYSTALS, Inorganic materials, 33(2), 1997, pp. 156-159
Citations number
9
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
2
Year of publication
1997
Pages
156 - 159
Database
ISI
SICI code
0020-1685(1997)33:2<156:LACGOC>2.0.ZU;2-J
Abstract
Two methods of preparing CdxHg1-xSe(Te) single crystals at low and con trolled vapor pressure are described. The electrical properties measur ed in various crystal regions are given. The crystals grown at low vap or pressure have a hole concentration of approximate to 2 x 10(22) m(- 3), and the crystals grown at controlled vapor pressure have an electr on concentration of (1.6-5) x 10(21) m(-3).