The effects of the major growth parameters (thermal conditions, pressu
re, vapor composition, and growth charge composition) on growth rate a
nd morphology are studied for germanium telluride crystals grown by cl
osed-system sublimation. Growth kinetics were characterized by in situ
measurements of the linear crystal size. Growth rate was also assesse
d from gravimetry data. The ranges of growth parameters were identifie
d in which the process is controlled by vapor transport or proceeds in
a mixed (mass transport + condensation) regime. The calculated growth
rates agree well with experiment. Estimates based on our results yiel
d a = (2.2 +/- 0.4) x 10(-3) for the effective condensation coefficien
t and D-0(GeTe/Ar) = 1.48 +/- 0.06 cm(2)/s for the effective diffusion
coefficient in the vapor phase.