CARRIER MOBILITY IN LOW-DIMENSIONAL IV-VI SEMICONDUCTOR STRUCTURES

Authors
BONDARENKO VV SIZOV FF
Citation
Vv. Bondarenko et Ff. Sizov, CARRIER MOBILITY IN LOW-DIMENSIONAL IV-VI SEMICONDUCTOR STRUCTURES, Inorganic materials, 33(2), 1997, pp. 178-180
Citations number
9
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
2
Year of publication
1997
Pages
178 - 180
Database
ISI
SICI code
0020-1685(1997)33:2<178:CMILIS>2.0.ZU;2-W
Abstract
Inelastic scattering of electrons from longitudinal optical phonons, a process prevailing both in perfect crystals and epitaxial layers of P bSnTe, is considered with the use of the variational method for low-di mensional IV-VI semiconductor structures.