PHOTOELECTRIC PROPERTIES OF PB1-X-Y,SNXGEYTE, IN EPITAXIAL-FILMS AND ARRAY PHOTODETECTORS

Authors
VASILKOV VN DIROCHKA AI KASATKIN IL SLYNKO EL CHISHKO VF
Citation
Vn. Vasilkov et al., PHOTOELECTRIC PROPERTIES OF PB1-X-Y,SNXGEYTE, IN EPITAXIAL-FILMS AND ARRAY PHOTODETECTORS, Inorganic materials, 33(2), 1997, pp. 181-184
Citations number
5
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
2
Year of publication
1997
Pages
181 - 184
Database
ISI
SICI code
0020-1685(1997)33:2<181:PPOPIE>2.0.ZU;2-1
Abstract
Photoelectric properties of Pb1-x-ySnxGeyTe:In epitaxial single-crysta l films were measured in the temperature range 10-80 K at background r adiation fluxes from 10(12) to 10(18) cm(-2) s(-1). The Lifetime of no n equilibrium electrons was found to depend on composition, temperatur e, and background flux. We propose a model for slow photocurrent relax ation in the films studied and calculate threshold parameters of charg e-accumulation array photodetectors.