ZNO ZNSE STRUCTURES PREPARED BY RADICAL-BEAM GETTER EPITAXY/

p-ZnO/n-ZnSe and p-ZnO/p-ZnSe/n-ZnSe structures were prepared by radic al-beam getter epitaxy under different conditions. The structures were characterized by current-light, I-V, C-V, and electroluminescence mea surements. Depth profiles of oxygen and selenium were investigated by secondary-ion mass spectrometry. The experimental data and the reporte d electron affinities of ZnO and ZnSe were used to develop energy-band models for the two types of heterostructure. The major defect species present in zinc selenide were identified from the luminescence spectr um of erbium, a spectroscopic probe introduced by ion implantation.