DISLOCATION CONTRAST IN WHITE-RADIATION SYNCHROTRON TOPOGRAPHY OF SILICON-CARBIDE

Authors
FISHER GR BARNES P KELLY JF
Citation
Gr. Fisher et al., DISLOCATION CONTRAST IN WHITE-RADIATION SYNCHROTRON TOPOGRAPHY OF SILICON-CARBIDE, Journal of applied crystallography, 26, 1993, pp. 677-682
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Journal of applied crystallography → ACNP
ISSN journal
00218898
Volume
26
Year of publication
1993
Part
5
Pages
677 - 682
Database
ISI
SICI code
0021-8898(1993)26:<677:DCIWST>2.0.ZU;2-Q
Abstract
Dislocation contrast in silicon carbide has been examined using white- radiation synchrotron topography. It was found that, in the case of di slocation bundles, the existing theory had to be extended to take into account the overlapping of dislocation strain fields. With this modif ication, the agreement between theory and observation is greatly impro ved.