CHARACTERIZATION OF GAAS AND INGAAS DOUBLE-QUANTUM-WELL HETEROSTRUCTURE FETS

Among the large variety of heterostructure field effect transistors, m ultichannel devices present a particular originality: their transcondu ctance profile is very flexible and depends on the structure parameter s. They are therefore naturally tailormade for high signal non linear applications. In this paper, the specific case of double quantum-well structures is studied. Conventional and pseudomorphic devices are char acterized under dc and RF conditions. Very high current densities (up to 1.2 A/mm) are demonstrated. The effect of different structural para meters on the transconductance and cut-off frequency is discussed. The results are analyzed in order to give a full understanding of these d evices and to demonstrate their performances.