DRIFT HOLE MOBILITY IN STRAINED AND UNSTRAINED DOPED SI1-XGEX ALLOYS

Authors
MANKU T MCGREGOR JM NATHAN A ROULSTON DJ NOEL JP HOUGHTON DC
Citation
T. Manku et al., DRIFT HOLE MOBILITY IN STRAINED AND UNSTRAINED DOPED SI1-XGEX ALLOYS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1990-1996
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
1990 - 1996
Database
ISI
SICI code
0018-9383(1993)40:11<1990:DHMISA>2.0.ZU;2-F
Abstract
Results of the drift hole mobility in strained and unstrained SiGe all oys are reported for Ge fractions varying from 0 to 30 percent and dop ing levels between 10(15)-10(19) cm-3. The mobilities are calculated t aking into account the following scattering mechanisms: acoustic, opti cal, alloy, and ionized-impurity scattering. The mobilities are then c ompared with experimental results for a boron doping concentration of 2 x 10(19) cm-3. Good agreement between experimental and theoretical v alues is obtained. The results show an increase in the mobility relati ve to that of silicon.