OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE

In this paper the problem of electron injection from silicon into sili con dioxide is tackled by means of a physical approach based on a simp le model that provides good agreement with experimental data for MOS s tructures. The model implements the calculation of the electron energy distribution at the Si-SiO2 interface by means of an efficient nonloc al algorithm, thus making possible a consistent treatment of the tunne ling of hot electrons across the oxide. The oxide-field dependence of electron injection is addressed and the relationship between barrier l owering and electron energy distributions is discussed.