PHYSICAL MODELS FOR BIPOLAR DEVICE SIMULATION AND THEIR EFFECTS ON CUTOFF FREQUENCY

Authors
SHIGYO N NIITSU Y
Citation
N. Shigyo et Y. Niitsu, PHYSICAL MODELS FOR BIPOLAR DEVICE SIMULATION AND THEIR EFFECTS ON CUTOFF FREQUENCY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2087-2089
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2087 - 2089
Database
ISI
SICI code
0018-9383(1993)40:11<2087:PMFBDS>2.0.ZU;2-G
Abstract
The effects of individual physical models on the bipolar ac characteri stic, i.e., the cutoff frequency f(T), have been investigated. It has been found that the model for the intrinsic carrier concentration n(i) has a negligible effect on the f(T)-I(C) characteristics. The effects of the carrier mobility mu and the apparent bandgap narrowing DELTAE( g)app on f(T) were found to be different for a device structure of bip olar transistor. A sufficient agreement between the simulation and mea surement of the f(T)-I(C) characteristics has been obtained using the proposed physical models.