SIMULATION OF PROTON-INDUCED LOCAL LIFETIME REDUCTION IN 10 KV DIODES

Authors
BRAMMER R HALLEN A HAKANSSON J
Citation
R. Brammer et al., SIMULATION OF PROTON-INDUCED LOCAL LIFETIME REDUCTION IN 10 KV DIODES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2089-2091
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2089 - 2091
Database
ISI
SICI code
0018-9383(1993)40:11<2089:SOPLLR>2.0.ZU;2-Y
Abstract
This paper presents the results of simulation of localized charge carr ier lifetime reductions in 10 kV power diodes. These results are compa red to experiments with proton irradiation as means for local lifetime reductions. It is shown that also the range straggling inherent in th e irradiation process must be taken into account in the simulations.