IIIA-3 STUDY OF THE DEPENDENCE OF GA0.47IN0.53 AS ALXIN1-XAS POWER HEMT BREAKDOWN VOLTAGE ON SCHOTTKY LAYER DESIGN AND DEVICE LAYOUT/

Authors
BROWN JJ BROWN AS ROSENBAUM SE SCHMITZ AS MATLOUBIAN M LARSON LE MELENDES MA THOMPSON MA
Citation
Jj. Brown et al., IIIA-3 STUDY OF THE DEPENDENCE OF GA0.47IN0.53 AS ALXIN1-XAS POWER HEMT BREAKDOWN VOLTAGE ON SCHOTTKY LAYER DESIGN AND DEVICE LAYOUT/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2111-2112
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2111 - 2112
Database
ISI
SICI code
0018-9383(1993)40:11<2111:ISOTDO>2.0.ZU;2-H