LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES

DUDLEY JJ BABIC DI MIRIN R YANG L MILLER BI RAM RJ REYNOLDS T HU EL BOWERS JE

Jj. Dudley et al., LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2119-2120

4

Engineering, Eletrical & Electronic","Physics, Applied

I.E.E.E. transactions on electron devices → ACNP

00189383

40

11

1993

2119 - 2120

ISI

0018-9383(1993)40:11<2119:LEII(V>2.0.ZU;2-6