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ITA
ENG
LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES
Authors
DUDLEY JJ
BABIC DI
MIRIN R
YANG L
MILLER BI
RAM RJ
REYNOLDS T
HU EL
BOWERS JE
Citation
Jj. Dudley et al., LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2119-2120
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices
→
ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2119 - 2120
Database
ISI
SICI code
0018-9383(1993)40:11<2119:LEII(V>2.0.ZU;2-6