ALGAAS GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR/

Authors
MOCHIZUKI K NAKAMURA T TANOUE T MASUDA H HORIUCHI M
Citation
K. Mochizuki et al., ALGAAS GAAS HBTS WITH REDUCED BASE-COLLECTOR CAPACITANCE BY USING BURIED SIO2 AND POLYCRYSTALLINE GAAS IN THE EXTRINSIC BASE AND COLLECTOR/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2124-2125
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2124 - 2125
Database
ISI
SICI code
0018-9383(1993)40:11<2124:AGHWRB>2.0.ZU;2-4