HIGH-VOLTAGE IMPLANTED RESURF P-LDMOS USING BICMOS TECHNOLOGY

Authors
ZHOU MJ DEBRUYCKER A VANCALSTER A WITTERS J
Citation
Mj. Zhou et al., HIGH-VOLTAGE IMPLANTED RESURF P-LDMOS USING BICMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2132-2132
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2132 - 2132
Database
ISI
SICI code
0018-9383(1993)40:11<2132:HIRPUB>2.0.ZU;2-Z