MICROSTRUCTURAL EXAMINATION OF EXTENDED CRYSTAL DEFECTS IN SILICON SELECTIVE EPITAXIAL-GROWTH

Authors
YEN H KVAM EP BASHIR R NEUDECK GW
Citation
H. Yen et al., MICROSTRUCTURAL EXAMINATION OF EXTENDED CRYSTAL DEFECTS IN SILICON SELECTIVE EPITAXIAL-GROWTH, Journal of electronic materials, 22(11), 1993, pp. 1331-1339
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
11
Year of publication
1993
Pages
1331 - 1339
Database
ISI
SICI code
0361-5235(1993)22:11<1331:MEOECD>2.0.ZU;2-I
Abstract
Selective epitaxial growth has been used to produce electronically iso lated devices. The oxide/silicon interfaces in such materials are ofte n associated with regions of poor device performance. In this study, t he extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a l arge portion of the defects were due to thermal expansion mismatch and can be avoided.