FAST GROWTH OF CD1-XZNXTE SINGLE-CRYSTALS BY PHYSICAL VAPOR TRANSPORT

Authors
WIEDEMEIER H WU GH
Citation
H. Wiedemeier et Gh. Wu, FAST GROWTH OF CD1-XZNXTE SINGLE-CRYSTALS BY PHYSICAL VAPOR TRANSPORT, Journal of electronic materials, 22(11), 1993, pp. 1369-1372
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
11
Year of publication
1993
Pages
1369 - 1372
Database
ISI
SICI code
0361-5235(1993)22:11<1369:FGOCSB>2.0.ZU;2-Z
Abstract
Good quality single crystals of Cd1-xZnxTe (x = 0.04, 0.08, and 0.115) were obtained by the very fast vapor growth technique developed in th is laboratory. The abundance of lamellar twins seems to be less than t hat in CdTe grown under the same conditions. Chemical etching results indicate a similar quality of the vapor grown crystals to those obtain ed from melt growth. The overall compositions of the crystals are unif orm and approach those of the initial source material with increasing amount transported.